Title :
High-quality two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures by LP-OMVPE
Author :
Agahi, Farid ; Yang, Jian-Xun ; Lau, Kei May ; Yngvesson, K. Sigfrid
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
fDate :
3/1/1993 12:00:00 AM
Abstract :
A combination of high mobility and high sheet carrier density in AlxGa1-xAs/GaAs two-dimensional electron gas (2DEG) elements was obtained by low-pressure organometallic vapor phase epitaxy (OMVPE). The sheet charge densities (ns) and mobilities (μ) at 77 K are 1.2×1012/cm2 and 90000 cm2/V-s for single-channel, and 2.0× 1012/cm2 and 64500 cm2/V-s for double-channel elements, respectively. Strong correlations between the photoluminescence spectrum of the AlxGa1-xAs layers and the 2DEG mobility were found. The 2DEG elements were used as mixers and detectors at millimeter wavelengths. Mixing at 94 GHz with a 1.7-GHz IF bandwidth and detection of signals as high as 238 GHz under a magnetic field were achieved with these devices
Keywords :
III-V semiconductors; aluminium compounds; carrier density; carrier mobility; gallium arsenide; high electron mobility transistors; mixers (circuits); photoluminescence; semiconductor growth; signal detection; solid-state microwave devices; two-dimensional electron gas; vapour phase epitaxial growth; 1.7 GHz; 238 GHz; 2DEG mobility; 77 K; 94 GHz; AlxGa1-xAs-GaAs; EHF; IF bandwidth; OMVPE; double-channel HEMT; double-channel elements; low-pressure vapor phase epitaxy; millimeter wavelengths; mobilities; photoluminescence spectrum; semiconductors; sheet charge densities; single channel HEMT; two-dimensional electron gas; Artificial intelligence; Detectors; Doping; Electrons; Epitaxial growth; Gallium arsenide; HEMTs; Impurities; MODFETs; Scattering;
Journal_Title :
Electron Devices, IEEE Transactions on
