Title :
Microwave performance of GaAs-on-Si MESFETs with Si buffer layers
Author :
Georgakilas, Alexandros ; Halkias, George ; Christou, Aris ; Papavassiliou, Christos ; Perantinos, George ; Konstantinidis, George ; Panayotatos, Paul N.
Author_Institution :
CALCE, Maryland Univ., College Park, MD, USA
fDate :
3/1/1993 12:00:00 AM
Abstract :
The incorporation of silicon-buffer layers is shown to be critical in attaining optimized microwave performance for GaAs on silicon MESFETs. A current gain cutoff frequency (ft) of 18 GHz and maximum power cutoff frequency (fmax) of 30 GHz is reported for relaxed geometry devices. The low parasitic capacitance and excellent device isolation make this structure suitable for monolithic integration
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor epitaxial layers; semiconductor junctions; silicon; solid-state microwave devices; 18 GHz; 30 GHz; GaAs; GaAs on Si; GaAs-Si; MESFETs; Si buffer layers; Si substrate; current gain cutoff frequency; device isolation; maximum power cutoff frequency; microwave performance; monolithic integration; parasitic capacitance; relaxed geometry devices; semiconductors; Buffer layers; Gallium arsenide; MESFETs; Materials reliability; Molecular beam epitaxial growth; Monolithic integrated circuits; Parasitic capacitance; Photodiodes; Silicon; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
