DocumentCode
863796
Title
Approaching the quantum limit
Author
Hess, Karl ; Iafrate, G.J.
Author_Institution
Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
Volume
29
Issue
7
fYear
1992
fDate
7/1/1992 12:00:00 AM
Firstpage
44
Lastpage
49
Abstract
The knowledge of the wavelike behavior of electrons that emerges as technology drives semiconductor geometries deeper into the nanometer domain is described. How the underlying size quantization effects restrict the scaling down of device dimensions is explained. Studies underway to explore and understand these phenomena are reviewed. Ways in which they can be exploited in new types of device are explored, alone with the fabrication problems attending such applications.<>
Keywords
quantum interference devices; quantum interference phenomena; semiconductor technology; electron wavelike behaviour; fabrication; nanometer domain; quantum interference; quantum limit; semiconductor geometries; size quantization effects; Application specific integrated circuits; Electron beams; Integrated circuit technology; Interference; MOSFETs; Quantum mechanics; Silicon; Switches; Temperature; Voltage;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/6.144511
Filename
144511
Link To Document