DocumentCode
863839
Title
Analysis of the effects of scaling on interconnect delay in ULSI circuits
Author
Bothra, Subhas ; Rogers, Boyd ; Kellam, Mark ; Osburn, C.M.
Author_Institution
MCNC Center for Microelectron., Research Triangle Park, NC, USA
Volume
40
Issue
3
fYear
1993
fDate
3/1/1993 12:00:00 AM
Firstpage
591
Lastpage
597
Abstract
A model has been developed to assess interconnect delay in ULSI circuits as dimensions are scaled deep into the submicrometer regime. In addition to RC delay, the model includes the effects of current density limitations imposed to prevent electromigration of the interconnect metallurgy. The authors confirm that interconnect delays will contribute significantly to the total circuit delay in future ULSI circuits unless improvements are implemented. However, contrary to previous reports, the authors show that lowering the resistivity of the interconnect will not result in significant improvements in interconnect switching speed. Only by introducing lower dielectric constant interlevel insulators or by improving the electromigration resistance of the interconnect can significant performance enhancements be realized
Keywords
VLSI; current density; delays; electromigration; metallisation; semiconductor device models; RC delay; ULSI circuits; current density limitations; electromigration; interconnect delay; interconnect metallurgy; model; submicrometer regime; switching speed; CMOS logic circuits; Capacitance; Current density; Delay effects; Dielectric constant; Dielectric materials; Electromigration; Integrated circuit interconnections; Switching circuits; Ultra large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.199365
Filename
199365
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