• DocumentCode
    863839
  • Title

    Analysis of the effects of scaling on interconnect delay in ULSI circuits

  • Author

    Bothra, Subhas ; Rogers, Boyd ; Kellam, Mark ; Osburn, C.M.

  • Author_Institution
    MCNC Center for Microelectron., Research Triangle Park, NC, USA
  • Volume
    40
  • Issue
    3
  • fYear
    1993
  • fDate
    3/1/1993 12:00:00 AM
  • Firstpage
    591
  • Lastpage
    597
  • Abstract
    A model has been developed to assess interconnect delay in ULSI circuits as dimensions are scaled deep into the submicrometer regime. In addition to RC delay, the model includes the effects of current density limitations imposed to prevent electromigration of the interconnect metallurgy. The authors confirm that interconnect delays will contribute significantly to the total circuit delay in future ULSI circuits unless improvements are implemented. However, contrary to previous reports, the authors show that lowering the resistivity of the interconnect will not result in significant improvements in interconnect switching speed. Only by introducing lower dielectric constant interlevel insulators or by improving the electromigration resistance of the interconnect can significant performance enhancements be realized
  • Keywords
    VLSI; current density; delays; electromigration; metallisation; semiconductor device models; RC delay; ULSI circuits; current density limitations; electromigration; interconnect delay; interconnect metallurgy; model; submicrometer regime; switching speed; CMOS logic circuits; Capacitance; Current density; Delay effects; Dielectric constant; Dielectric materials; Electromigration; Integrated circuit interconnections; Switching circuits; Ultra large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.199365
  • Filename
    199365