Title :
Partitioned-charge-based BJT model using transient charge control relations for arbitrary doping and bias conditions
Author :
Parker, James R. ; Roulston, David J. ; Hamel, John Stan
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
3/1/1993 12:00:00 AM
Abstract :
Recent transient charge control (TCC) relations such as the TICC or more general GTCC are applied to accurate calculation of base charge partitioning for arbitrary doping profiles and bias conditions. A large-signal BJT circuit model is developed using this approach; both DC and complete first-order AC characteristics are derived from static device simulations
Keywords :
bipolar transistors; doping profiles; equivalent circuits; semiconductor device models; transient response; AC characteristics; BJT model; DC characteristics; base charge partitioning; bias conditions; doping profiles; large-signal BJT circuit model; static device simulations; transient charge control relations; Admittance; Capacitance; Control theory; Councils; Delay effects; Doping profiles; Equations; Equivalent circuits; Frequency; Semiconductor process modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
