Title :
17 GHz RF Front-Ends for Low-Power Wireless Sensor Networks
Author :
Wu, Wanghua ; Sanduleanu, Mihai A T ; Li, Xia ; Long, John R.
Author_Institution :
Electron. Res. Lab./DIMES, Delft Univ. of Technol., Delft
Abstract :
A 17 GHz low-power radio transceiver front-end implemented in a 0.25 mum SiGe:C BiCMOS technology is described. Operating at data rates up to 10 Mbit/s with a reduced transceiver turn-on time of 2 mus, gives an overall energy consumption of 1.75 nJ/bit for the receiver and 1.6 nJ/bit for the transmitter. The measured conversion gain of the receiver chain is 25-30 dB into a 50 Omega load at 10 MHz IF, and noise figure is 12 plusmn0.5 dB across the band from 10 to 200 MHz. The 1-dB compression point at the receiver input is -37 dBm and IIP3 is -25 dBm. The maximum saturated output power from the on-chip transmit amplifier is -1.4 dBm. Power consumption is 17.5 mW in receiver mode, and 16 mW in transmit mode, both operating from a 2.5 V supply. In standby, the transceiver supply current is less than 1 muA.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC; carbon; transceivers; wireless sensor networks; BiCMOS technology; SiGe:C; compression point; energy consumption; frequency 10 MHz; frequency 17 GHz; front-end implementation; gain 25 dB to 30 dB; low-power radio transceiver; low-power wireless sensor networks; maximum saturated output power; noise figure 12 dB; on-chip transmit amplifier; power 16 mW; power 17.5 mW; receiver; size 0.25 mum; time 2 mus; transmitter; voltage 2.5 V; BiCMOS integrated circuits; Energy consumption; Gain measurement; Noise measurement; Power amplifiers; Radio frequency; Radio transceivers; Radio transmitters; Receivers; Wireless sensor networks; BAW resonator; SiGe BiCMOS technology; energy efficiency; energy/bit; low-power radio; radio transceiver front-end; wireless sensor networks;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2008.2002336