DocumentCode
864004
Title
Frequency response of the surface inversion layer in silicon
Author
Zaininger, K.H. ; Warfield, G.
Volume
52
Issue
8
fYear
1964
Firstpage
971
Lastpage
972
Keywords
Capacitance; Delay; Frequency response; Hysteresis; MOS capacitors; Oxidation; Predictive models; Response surface methodology; Semiconductor process modeling; Silicon;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1964.3196
Filename
1445126
Link To Document