DocumentCode
864117
Title
Model for the electric fields in LDD MOSFETs. I. Field peaks on the source side
Author
Orlowski, Marius K. ; Werner, Christoph ; Klink, Joachim P.
Author_Institution
Siemens AG, Munich, West Germany
Volume
36
Issue
2
fYear
1989
fDate
2/1/1989 12:00:00 AM
Firstpage
375
Lastpage
381
Abstract
An analytic model for high electric fields on the source side in lightly doped drain (LDD)-type MOSFETs is proposed. The present model explains consistently the dependence of the source field peak on various relevant process and device parameters. It is shown that the source peak plays a role in avalanche and hot-carrier phenomena. The model predictions are compared with the results of extensive 2-D simulations
Keywords
electric fields; insulated gate field effect transistors; semiconductor device models; 2-D simulations; LDD MOSFETs; analytic model; avalanche phenomena; device parameters; high electric fields; hot-carrier phenomena; lightly doped drain; process parameters; source field peak; source side; Degradation; Electrodes; Helium; Hot carriers; Ion beams; MOSFETs; Predictive models; Probability distribution; Shadow mapping; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.19939
Filename
19939
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