Title :
A 22–24 GHz 4-Element CMOS Phased Array With On-Chip Coupling Characterization
Author :
Yu, Tiku ; Rebeiz, Gabriel M.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ. at San Diego, San Diego, CA
Abstract :
This paper presents a 22-24 GHz CMOS 4-element phased array based on the all-RF architecture with very low power consumption and chip area. The measured array performance, done at the system level at 22-24 GHz, shows an input and output match of <-13 dB, 9-12 dB gain, 7.5-8.0 dB NF, an IIP3 of -9.5 to -12.5 dBm, and a 4-bit phase control with an rms gain and phase error of <1.2 dB and <6deg, respectively (<0.5 dB and <3deg at 23.5-24.5 GHz). The chip consumes 76.5 mA from a 1.5 V supply and is 3 mm2 in area. Extensive coupling measurements show that the dominant on-chip coupling components result in system-level gain and phase errors which are proportional to the LNA gain. To our knowledge, this is the first analysis of on-chip coupling effects on phased array performance, and the first demonstration of an all-RF mm-wave CMOS phased array with full amplitude and phase control on each element. The application areas are in high data-rate communications and automotive radars.
Keywords :
CMOS analogue integrated circuits; antenna phased arrays; electromagnetic coupling; field effect MMIC; low-power electronics; microwave antenna arrays; 4-element CMOS antenna phased array performance; amplitude control; automotive radars; current 76.5 mA; frequency 22 GHz to 24 GHz; gain 9 dB to 12 dB; high data-rate communications; noise figure 7.5 dB to 8 dB; on-chip coupling; phase control; phase error; rms gain; voltage 1.5 V; wireless communications; Energy consumption; Error correction; Gain measurement; Impedance matching; Noise measurement; Performance gain; Phase control; Phase measurement; Phased arrays; Semiconductor device measurement; Active phase generator; CMOS integrated circuits; MIMO systems; RF phase shifting; phase shifters; phased arrays; radar; wireless communications;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2008.2001905