DocumentCode :
864153
Title :
Silicon MOS field effect transistors using impurity redistribution during oxidation
Author :
Chopra, Ashish ; Vadasz, L.
Volume :
52
Issue :
8
fYear :
1964
Firstpage :
985
Lastpage :
986
Keywords :
Aluminum; Boron; Doping; Electric breakdown; FETs; Impurities; Oxidation; Silicon; Substrates; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1964.3212
Filename :
1445142
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=864153
