Title :
Linear- and Geiger-Mode Characteristics of Al0.8Ga0.2As Avalanche Photodiodes
Author :
Min Ren ; Yaojia Chen ; Wenlu Sun ; Xiao Jie Chen ; Johnson, Erik B. ; Christian, James F. ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
We report Al0.8Ga0.2As avalanche photodiodes with low dark current and low excess noise. In linear mode when biased to a photocurrent gain of 200, a 150-μm diameter device exhibits dark current of 32 pA (180 nA/cm2). The external quantum efficiency is 31% at 490 nm and the excess noise factor corresponds to k ~ 0.15. In Geiger mode operation, low dark count probability of 10-5 at room temperature is reported.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; dark conductivity; optical materials; photoconductivity; photodetectors; photoemission; Al0.8Ga0.2As; Al0.8Ga0.2As avalanche photodiodes; Geiger mode operation; Geiger-mode characteristics; current 32 pA; dark count probability; dark current; excess noise factor; external quantum efficiency; linear-mode characteristics; photocurrent gain; room temperature; size 150 mum; temperature 293 K to 298 K; wavelength 490 nm; Avalanche photodiodes; Dark current; Logic gates; Noise; Passivation; Photonics; Temperature measurement; Avalanche photodiodes; photodetectors;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2014.2359177
