Title :
A SiGe MMIC variable gain cascode amplifier
Author :
Chaudhry, Qasim ; Alidio, Raul ; Sakamoto, Glenn ; Cisco, Terry
Author_Institution :
Raytheon Electron. Syst., El Segundo, CA, USA
Abstract :
A silicon-germanium variable gain cascode amplifier has been developed to combine the functionality of an amplifier and an attenuator into one monolithic microwave integrated circuit (MMIC). The cascode amplifier, which was designed for a 7-11 GHz frequency range, achieved a gain of 12.5 dB, an input return loss of 7.5 dB, and an output return loss of 12.5 dB. The cascode amplifier exhibited 16 dB of gain control.
Keywords :
Ge-Si alloys; MMIC amplifiers; bipolar MMIC; bipolar analogue integrated circuits; gain control; heterojunction bipolar transistors; impedance matching; integrated circuit design; semiconductor materials; 12.5 dB; 7 to 11 GHz; 7.5 dB; RF performance evaluation; SiGe; SiGe HBT MMIC; SiGe MMIC amplifier; X-band amplifier; attenuator; monolithic microwave IC; monolithic microwave integrated circuit; variable gain cascode amplifier; Attenuation; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Performance gain; Silicon germanium;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2002.805533
