A SiGe MMIC variable gain cascode amplifier

Author

Chaudhry, Qasim ; Alidio, Raul ; Sakamoto, Glenn ; Cisco, Terry

Author_Institution

Raytheon Electron. Syst., El Segundo, CA, USA

Volume

12

Issue

11

fYear

2002

Firstpage

424

Lastpage

425

Abstract

A silicon-germanium variable gain cascode amplifier has been developed to combine the functionality of an amplifier and an attenuator into one monolithic microwave integrated circuit (MMIC). The cascode amplifier, which was designed for a 7-11 GHz frequency range, achieved a gain of 12.5 dB, an input return loss of 7.5 dB, and an output return loss of 12.5 dB. The cascode amplifier exhibited 16 dB of gain control.

Keywords

Ge-Si alloys; MMIC amplifiers; bipolar MMIC; bipolar analogue integrated circuits; gain control; heterojunction bipolar transistors; impedance matching; integrated circuit design; semiconductor materials; 12.5 dB; 7 to 11 GHz; 7.5 dB; RF performance evaluation; SiGe; SiGe HBT MMIC; SiGe MMIC amplifier; X-band amplifier; attenuator; monolithic microwave IC; monolithic microwave integrated circuit; variable gain cascode amplifier; Attenuation; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Performance gain; Silicon germanium;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2002.805533

Filename

1047036