DocumentCode :
864494
Title :
Negative transfer resistance effect in P–type silicon
Author :
Suden, E.M. ; Camarata, R.J. ; Jarmoc, E.A.
Volume :
52
Issue :
9
fYear :
1964
Firstpage :
1051
Lastpage :
1051
Keywords :
Boron; Coupling circuits; Diodes; Frequency; Indium; Inductors; Oscillators; Probes; Silicon; Voltage measurement;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1964.3246
Filename :
1445176
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=864494
