Title :
High-frequency FET noise performance: a new approach
Author :
Cappy, Alain ; Heinrich, Wolfgang
Author_Institution :
Centre Hyperfrequences et Semiconducteurs, Univ. des Sci. et Tech. de Lille-Flandres-Artois, Villeneuve d´´Ascq, France
fDate :
2/1/1989 12:00:00 AM
Abstract :
A formulation is proposed for calculating the FET noise performance in the high-frequency range (EHF). In the first step, the concept of a local small-signal equivalent circuit is introduced, and a novel method for calculating the FET admittance parameters is proposed. In the second step, a novel formulation of the impedance field is given. It is shown that this approach reflects better the frequency evolution of the noise source values and consequently gives a better noise figure
Keywords :
electron device noise; field effect transistors; semiconductor device models; solid-state microwave devices; EHF; FET admittance parameters; FET noise performance calculation; formulation; frequency evolution; high-frequency range; impedance field; local small-signal equivalent circuit; model; noise figure; noise source values; Admittance; Circuit noise; Equivalent circuits; FETs; Frequency; Gallium arsenide; Impedance; Low-noise amplifiers; Millimeter wave technology; Noise figure;
Journal_Title :
Electron Devices, IEEE Transactions on
