Automatic characterization and modeling of microwave low-noise HEMTs

Author

Caddemi, Alina ; Martines, Giovanni ; Sannino, Mario

Author_Institution

Dipartimento di Ingegneria, Palermo Univ., Italy

Volume

41

Issue

6

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

946

Lastpage

950

Abstract

An automated measuring system is presented which allows the characterization of microwave transistors in terms of noise, gain, and scattering parameters simultaneously through noise figure measurements only. The use of one setup only, very low time consumption, repeatability, and accuracy are the advantages of the method. The setup is driven by an original software which selects the best measuring conditions for accuracy and performs the measurement and data-processing routines without any action of the operator. The testing of 32 samples of HEMTs of four families in the 8-12 GHz frequency range has been carried out before and after 300 h of storage at 200°C. The model of the typical device of each series is extracted by means of the noise and scattering parameter sets so obtained

Keywords

S-parameters; computerised instrumentation; high electron mobility transistors; semiconductor device models; semiconductor device noise; semiconductor device testing; solid-state microwave devices; 200 degC; 300 hours; 8 to 12 GHz; HEMT; accuracy; automated measuring system; gain; microwave transistors; modeling; noise figure measurements; repeatability; scattering parameters; storage; Gain measurement; Microwave measurements; Microwave transistors; Noise figure; Noise measurement; Performance evaluation; Scattering parameters; Software measurement; Software performance; Testing;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.199440

Filename

199440