Title :
An automated millimeter-wave active load-pull measurement system based on six-port techniques
Author :
Ghannouchi, Fadhel M. ; Bosisio, Renato G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Ecole Polytech. de Montreal, Que., Canada
fDate :
12/1/1992 12:00:00 AM
Abstract :
A millimeter-wave active load-pull measurement system for large-signal characterization of millimeter-wave transistors is presented. The characterization system uses two six-port junctions for simultaneous impedance and power flow measurements. Large-signal characterization of a GaAs FET operated in class A and class C at 28 GHz in terms of constant absorbed power contours, constant operating power gain contours and constant DC current contours in the load plane ZL is presented. Effects of the unilaterality assumption on the operating power gain and output power are investigated for both class A and class C amplifier designs
Keywords :
III-V semiconductors; Schottky gate field effect transistors; computerised instrumentation; electric impedance measurement; gallium arsenide; microwave amplifiers; microwave reflectometry; solid-state microwave devices; 28 GHz; FET; GaAs; III-V semiconductors; automated millimeter-wave active load-pull measurement; class A; class C; constant DC current contours; constant absorbed power contours; constant operating power gain contours; large-signal characterization; microwave amplifier; millimeter-wave transistors; power flow measurements; simultaneous impedance; six-port junctions; six-port techniques; unilaterality assumption; FETs; Fluid flow measurement; Gallium arsenide; Impedance measurement; Load flow; Millimeter wave measurements; Millimeter wave transistors; Power amplifiers; Power generation; Power measurement;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
