DocumentCode :
864663
Title :
Erbium-Doped Photonic Crystal Microcavity for Light Extraction Enhancement at 300 K
Author :
Salomon, Antoine ; Calvo, Vincent ; Zelsmann, Marc ; Charvolin, Thomas ; Fedeli, Jean-Marc ; Hadji, Emmanuel
Author_Institution :
CEA, Grenoble
Volume :
12
Issue :
6
fYear :
2006
Firstpage :
1592
Lastpage :
1595
Abstract :
We present optical characterization of silicon-on-insulator (SOI)-based photonic crystal (PC) microcavities doped with erbium and oxygen. Photoluminescence (PL) is recorded up to the room temperature. A large PL intensity enhancement is obtained compared to the case of identically implanted SOI wafer at 1.54 mum. Moreover, no temperature-quenching effect is observed
Keywords :
erbium; ion implantation; micro-optics; microcavities; oxygen; photoluminescence; photonic crystals; silicon-on-insulator; 1.54 mum; 293 to 298 K; 300 K; Si-SiO2:Er; Si-SiO2:O2; erbium-doped photonic crystal; implanted silicon-on-insulator wafer; intensity enhancement; light extraction enhancement; microcavity; optical characterization; photoluminescence; room temperature; silicon-on-insulator; Erbium; Etching; Microcavities; Nanoelectronics; Optical resonators; Personal communication networks; Photoluminescence; Photonic crystals; Silicon; Temperature; Erbium/oxygen implantation; light extraction; microcavity; photoluminescence (PL); photonic crystals (PCs); silicon-on-insulator (SOI);
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2006.885138
Filename :
4032695
Link To Document :
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