Title :
Effect of Space Charge Region Width on Er-Related Luminescence in Reverse Biased Si:Er-Based Light Emitting Diodes
Author :
Shmagin, Viacheslav B. ; Obolensky, Sergey V. ; Remizov, Dmitry Yu ; Kuznetsov, Viktor P. ; Krasilnik, Zakhary F.
Author_Institution :
Inst. for Phys. of Microstructures, Acad. of Sci., Nizhny Novgorod
Abstract :
In this paper, an effect of space charge region (SCR) width on Er-related electroluminescence (EL) in reverse biased Si:Er-based light-emitting diodes (LEDs) is under investigation. It is concluded that a trivial widening of the SCR in the examined LEDs with triangular and trapezoidal electric field profiles through SCR does not result in a desirable increase in the Er-related EL intensity. The tunnel transit-time diode structure with a complicated electric field profile through SCR is offered to increase the Er-related EL intensity. The difficulties hampering this process in erbium EL from reverse biased LEDs are under discussion
Keywords :
electroluminescence; elemental semiconductors; erbium; integrated optoelectronics; light emitting diodes; silicon; space charge; Er-related luminescence; Si:Er; Si:Er-based LED; light emitting diodes; reverse biased LED; space charge region width; trapezoidal electric field profile; triangular electric field profile; tunnel transit-time diode structure; Electroluminescence; Erbium; Light emitting diodes; Luminescence; Microstructure; Physics; Silicon; Space charge; Temperature; Thyristors; Erbium-doped silicon; impact excitation; light emitting diodes; p-n junction breakdown;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2006.884066
