Effect of Space Charge Region Width on Er-Related Luminescence in Reverse Biased Si:Er-Based Light Emitting Diodes

Author

Shmagin, Viacheslav B. ; Obolensky, Sergey V. ; Remizov, Dmitry Yu ; Kuznetsov, Viktor P. ; Krasilnik, Zakhary F.

Author_Institution

Inst. for Phys. of Microstructures, Acad. of Sci., Nizhny Novgorod

Volume

12

Issue

6

fYear

2006

Firstpage

1556

Lastpage

1560

Abstract

In this paper, an effect of space charge region (SCR) width on Er-related electroluminescence (EL) in reverse biased Si:Er-based light-emitting diodes (LEDs) is under investigation. It is concluded that a trivial widening of the SCR in the examined LEDs with triangular and trapezoidal electric field profiles through SCR does not result in a desirable increase in the Er-related EL intensity. The tunnel transit-time diode structure with a complicated electric field profile through SCR is offered to increase the Er-related EL intensity. The difficulties hampering this process in erbium EL from reverse biased LEDs are under discussion

Keywords

electroluminescence; elemental semiconductors; erbium; integrated optoelectronics; light emitting diodes; silicon; space charge; Er-related luminescence; Si:Er; Si:Er-based LED; light emitting diodes; reverse biased LED; space charge region width; trapezoidal electric field profile; triangular electric field profile; tunnel transit-time diode structure; Electroluminescence; Erbium; Light emitting diodes; Luminescence; Microstructure; Physics; Silicon; Space charge; Temperature; Thyristors; Erbium-doped silicon; impact excitation; light emitting diodes; p-n junction breakdown;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2006.884066

Filename

4032697