DocumentCode :
864741
Title :
Field–effect transistor with forward biased gate–channel junction
Author :
Cobbold, Richard S. C. ; Trofimenkoff, F.N.
Volume :
52
Issue :
9
fYear :
1964
Firstpage :
1073
Lastpage :
1073
Keywords :
Conductivity; Diodes; Equivalent circuits; FETs; Forward contracts; Hafnium; Radio access networks; Switches; Switching circuits; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1964.3272
Filename :
1445202
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=864741
