DocumentCode :
864902
Title :
Ultrafast and highly sensitive photodetectors with recessed electrodes fabricated on low-temperature-grown GaAs
Author :
Mikulics, M. ; Wu, S. ; Marso, M. ; Adam, R. ; Förster, A. ; van der Hart, A. ; Kordos, P. ; Lüth, H. ; Sobolewski, Roman
Author_Institution :
Res. Centre Julich, Tech. Univ. Braunschweig, Germany
Volume :
18
Issue :
7
fYear :
2006
fDate :
4/1/2006 12:00:00 AM
Firstpage :
820
Lastpage :
822
Abstract :
We have fabricated and characterized ultrafast metal-semiconductor-metal (MSM) photodetectors with recessed electrodes, based on low-temperature-grown GaAs. The new recessed-electrode MSM geometry led to an improved electric-field distribution inside the photodetector structure and resulted in a 25% breakdown voltage and sensitivity increase with simultaneous four-fold reduction of capacitance, as compared to the identical MSM devices with planar electrodes. Time-resolved studies performed using 100-fs-duration laser pulses showed that recessed-electrode MSMs exhibited 1.0-ps-wide photoresponse transients with no slow after-pulse tails and their photoresponse time was 0.9 ps. The improved transient photoresponse parameters are the main advantages of the recessed-electrode geometry.
Keywords :
III-V semiconductors; electrodes; gallium arsenide; high-speed optical techniques; integrated optics; integrated optoelectronics; metal-semiconductor-metal structures; photodetectors; 0.9 ps; 1.0 ps; 100 fs; GaAs; breakdown voltage; capacitance reduction; electric-field distribution; femtosecond-duration laser pulses; highly sensitive photodetectors; low-temperature-grown GaAs; photoresponse transients; planar electrodes; recessed electrodes; time-resolved studies; ultrafast photodetectors; Capacitance; Electrodes; Fingers; Gallium arsenide; Geometrical optics; Laboratories; Optical pulses; Photodetectors; Tail; Transistors; Low-temperature-grown GaAs (LT-GaAs); metal–semiconductor– metal (MSM) photodetectors; metal–semiconductor–metal(MSM)diode; recessed electrode structure; ultrafast photodetectors;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2006.871696
Filename :
1605300
Link To Document :
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