Title :
Semiconductors at cryogenic temperatures
Author_Institution :
Chelsea College of Science and Technology, London, England
Abstract :
A review is made of those physical properties of semiconductors which are relevant to device operation at cryogenic temperatures. These include carrier density, mobility, hot carrier phenomena, recombination and trapping, and the performance of p-n junctions. A description is then given of the cryogenic operation of semiconductor devices together with an assessment of future possibilities.
Keywords :
Charge carrier density; Conducting materials; Conductors; Costs; Cryogenics; Power generation economics; Semiconductor devices; Semiconductor diodes; Semiconductor materials; Temperature distribution;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1964.3296
