A high-speed cadmium telluride radiation detector

Author

Baba, Sueki ; Tsutsui, Hiroshi ; Ohmori, Kouichi ; Ohtsuchi, Tetsuro ; Toyoda, Hideo ; Funakoshi, Hiromasa ; Kawara, Toshiyuki

Author_Institution

Matsushita Electric Ind. Co. Ltd., Moriguchi, Japan

Volume

40

Issue

1

fYear

1993

fDate

2/1/1993 12:00:00 AM

Firstpage

56

Lastpage

62

Abstract

A small CdTe detector capable of high repetition pulse rate with possibilities for applications in radiation monitoring and similar uses was developed. The hole transit time through the crystal was shortened by decreasing the crystal thickness of 0.3 mm (1×1 mm) and by applying fields as high as 10 kV/cm. The electron transit time, although short, was electrically elongated by applying appropriate capacitance to the amplifier, and the output pulse waveform was designed to be similar to that for the holes. High, uniform output pulses with widths of 30 ns were thus obtained. The energy resolution was 9 keV for 59.4-keV photons from ²⁴¹Am using a 100-ns-response amplifier

Keywords

II-VI semiconductors; cadmium compounds; electrical conductivity of crystalline semiconductors and insulators; semiconductor counters; 0.3 nm; 30 ns; 59.4 keV; 9 keV; CdTe detector; electron transit time; energy resolution; high repetition pulse rate; high-speed; hole transit time; photon detection; radiation monitoring; semiconductor; Cadmium compounds; Electrodes; Etching; Laboratories; Photonic crystals; Radiation detectors; Radiation monitoring; Semiconductor device measurement; Time factors; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.199487

Filename

199487