Title :
Thin-film transistors with sputtered CdSe as semiconductor
Author :
Moersch, G. ; Rava, P. ; Schwarz, F. ; Paccagnella, A.
Author_Institution :
Stuttgart Univ., West Germany
fDate :
2/1/1989 12:00:00 AM
Abstract :
Thin-film transistors have been fabricated on a CdSe stoichiometric semiconductor film deposited by using RF magnetron sputtering from a CdSe target. The main features and the characteristic data of such transitions realized are presented. The threshold voltage Vt=4 V, the field-effect mobility μ=45 cm2 /V-s, and the switching current ratio ION/IOFF=5×107. These values are comparable to those obtained for similar devices fabricated on evaporated CdSe films
Keywords :
II-VI semiconductors; cadmium compounds; semiconductor technology; sputtered coatings; thin film transistors; 4 V; RF magnetron sputtering; TFT; field-effect mobility; semiconductors; sputtered CdSe; stoichiometric semiconductor film; switching current ratio; thin film transistors; threshold voltage; Atmosphere; Boats; Crystallization; Insulation; Liquid crystal displays; Radio frequency; Semiconductor films; Sputtering; Substrates; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
