Title :
The role of unintentional acceptor concentration on the threshold voltage of modulation-doped field-effect transistors
Author :
Krantz, Richard J. ; Bloss, Walter L.
Author_Institution :
Aerosp. Corp., Los Angeles, CA, USA
fDate :
2/1/1989 12:00:00 AM
Abstract :
A strong-inversion, depletion-layer model of the threshold voltage for MODFETs has been used to assess the role of unintentional acceptor doping. For concentrations less than 1013 cm-3, acceptor doping has little effect on the threshold voltage. As acceptor density increases, the GaAs depletion-layer charge contribution will dominate, causing the threshold voltage to exceed the low-density value by as much as 1.4 V at acceptor densities approaching 1017 cm -3
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; GaAs depletion-layer charge contribution; GaAs-AlGaAs; HEMTs; MODFETs; acceptor densities; depletion-layer model; modulation-doped field-effect transistors; role of unintentional acceptor doping; semiconductors; strong inversion; threshold voltage; unintentional acceptor concentration; Doping; Epitaxial layers; Erbium; FETs; Gallium arsenide; HEMTs; MODFETs; Semiconductor process modeling; Threshold voltage; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
