Title :
Linearity of low microwave noise AlGaN/GaN HEMTs
Author :
Moon, J.S. ; Micovic, M. ; Kurdoghlian, A. ; Janke, P. ; Hashimoto, P. ; Wong, W.-S. ; McCray, L.
Author_Institution :
HRL Labs., Malibu, CA, USA
fDate :
10/24/2002 12:00:00 AM
Abstract :
The linearity of low microwave noise AlGaN/GaN HEMTs was evaluated with two-tone excitation measurements at optimum low noise biases. A 0.15 × 100 μm2 device yields an output third-order intercept point (OIP3) of 23 dBm at Vds = 3 V, and Vgs = -5V, where a noise figure (NF) of 1.0 and 1.75 dB was obtained at 10 and 20 GHz, respectively. The C/IM3, linearity figure-of-merit under the large RF signals, saturates near -28 dBc as Vds becomes greater than the knee voltage. Both applied bias and gate periphery dependence of the linearity were evaluated. Realisation of highly linear low-noise GaN HEMTs is feasible.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; intermodulation distortion; microwave field effect transistors; semiconductor device noise; wide band gap semiconductors; 10 GHz; 20 GHz; AlGaN-GaN; applied bias dependence; figure-of-merit; gate periphery dependence; linearity; low microwave noise HEMT; optimum low noise biases; output third-order intercept point; saturation behaviour; third-harmonic product; two-tone excitation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020920
