Title :
High performance 1500 V 4H-SiC junction barrier Schottky diodes
Author :
Zhao, J.H. ; Alexandrov, P. ; Fursin, L. ; Feng, Z.C. ; Weiner, M.
Author_Institution :
United Silicon Carbide Inc., New Brunswick, NJ, USA
fDate :
10/24/2002 12:00:00 AM
Abstract :
The design, fabrication and characterisation results are reported of junction barrier Schottky (JBS) diodes of 1500 V-9 A and 1000 V-50 A based on 10.5 μm 4H-SiC blocking layers doped to 6.4 × 1015 cm-3 and 1.3 × 1016 cm-3, respectively. The clear advantages of JBS diodes over conventional Schottky diodes can be achieved without extra fabrication penalty.
Keywords :
Schottky diodes; silicon compounds; wide band gap semiconductors; 10.5 micron; 1000 V; 1500 V; 4H-SiC junction barrier Schottky diodes; 50 A; 9 A; I-V characteristics; JBS diodes; SiC; blocking layers; design; fabrication;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020947
