• DocumentCode
    865343
  • Title

    Crystallographic Contrast Due to Primary Ion Channelling in the Scanning Ion Microscope

  • Author

    Marche, P. H La ; Levi-Setti, R. ; Lam, K.

  • Author_Institution
    Department of Physics and the Enrico Fermi Institute the University of Chicago, Chicago IL 60637
  • Volume
    30
  • Issue
    2
  • fYear
    1983
  • fDate
    4/1/1983 12:00:00 AM
  • Firstpage
    1240
  • Lastpage
    1242
  • Abstract
    We observe large crystallographic contrast, in scanning ion micrographs of recrystallized Cu and Si, made by collecting secondary ions or electrons. The contrast is attributed to primary ion-channelling effects. Observed relative secondary ion and electron yields are discussed in relation to the rate of energy loss, calculated for various crystallographic directions.
  • Keywords
    Crystallography; Electrons; Energy loss; Etching; Focusing; Lattices; Microscopy; Nuclear electronics; Probes; Sputtering;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1983.4332498
  • Filename
    4332498
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=865343