Title :
Crystallographic Contrast Due to Primary Ion Channelling in the Scanning Ion Microscope
Author :
Marche, P. H La ; Levi-Setti, R. ; Lam, K.
Author_Institution :
Department of Physics and the Enrico Fermi Institute the University of Chicago, Chicago IL 60637
fDate :
4/1/1983 12:00:00 AM
Abstract :
We observe large crystallographic contrast, in scanning ion micrographs of recrystallized Cu and Si, made by collecting secondary ions or electrons. The contrast is attributed to primary ion-channelling effects. Observed relative secondary ion and electron yields are discussed in relation to the rate of energy loss, calculated for various crystallographic directions.
Keywords :
Crystallography; Electrons; Energy loss; Etching; Focusing; Lattices; Microscopy; Nuclear electronics; Probes; Sputtering;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1983.4332498