DocumentCode :
865369
Title :
1 Gc transistor amplifier stage using Linvill technique
Author :
Gelnovatch, V. ; Hambleton, G.E.
Author_Institution :
US Army Electronics Labs., Fort Monmouth, NJ
Volume :
52
Issue :
10
fYear :
1964
Firstpage :
1262
Lastpage :
1262
Abstract :
Recently, there have evolved graphical techniques to facilitate transistor amplifier design using a sampled parameter approach. Specifically, a method suggested by Linvill??J has found acceptance at VHF and UHF frequencies. Since transistors with useful power gains in the Lband region have become available, it was natural to attempt to extend this technique to the higher frequencies. This communication describes a laboratory amplifier, designed and built using the above mentioned technique. The power gain was measured to be 103 db when the amplifier was tuned for maximum power gain. The load and source admittances that were presented to the transistor were measured on a General Radio immitance bridge and excellent correlation was found between measured values and those calculated from the Linvill approach. This measured noise figure wasf ound to be 8 db (calculated, 7.62 db). From the good correlation obtained between theory and practice, in the above experiment, the Linvill method of amplifier design at 1 Gc has been demonstrated to be an excellent tool in the hands of the design engineer.
Keywords :
Bandwidth; Capacitance; Circuits; Coaxial components; Filters; Gain; Laboratories; Radio frequency; Radiofrequency amplifiers;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1964.3340
Filename :
1445270
Link To Document :
بازگشت