Title :
Biasing of silicon transistors
Author_Institution :
National Research Council of Canada, Radio and Electrical Engineering Division, Ottawa, Canada
fDate :
4/1/1965 12:00:00 AM
Abstract :
A modification of the voltage-feedback bias circuit applicable to modern silicon transistors is described, and formulas are given for the calculation of performance. For moderate power-supply potentials, variations in VCE can be held within 1.0 V for a temperature rise of 75 degC.
Keywords :
amplifiers; circuit theory; transistor circuits; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19650031
