• DocumentCode
    865714
  • Title

    A CMOS-integrated `ISFET-operational amplifier´ chemical sensor employing differential sensing

  • Author

    Wong, Hon-Sum ; White, Marvin H.

  • Author_Institution
    Sherman Fairchild Center, Lehigh Univ., Bethlehem, PA, USA
  • Volume
    36
  • Issue
    3
  • fYear
    1989
  • fDate
    3/1/1989 12:00:00 AM
  • Firstpage
    479
  • Lastpage
    487
  • Abstract
    The ISFET (ion-sensitive field-effect transistor) pH sensor is first matched with a MOSFET at the differential input stage of a CMOS operational amplifier (called the ISFET-operational amplifier) to cancel out the temperature sensitivity. Then, the output of an ISFET-operational amplifier with a Ta2O5/SiO2 gate (58-59 mV/pH) ISFET is differentially amplified against the output of another on-chip ISFET-operational amplifier with a SiOx Ny/Si3N4/SiO2 gate ISFET (18-20-mV/pH). An on-chip noble metal counterelectrode serves as the electrical contact to define the electric potential of the electrolyte. No external reference electrode is required. The difference measurement technique achieves (1) common-mode rejection of the solution potential, and (2) relaxation of the requirement that the on-chip reference electrode be ideal. The CMOS-compatible ISFET process is modified from a standard self-aligned polysilicon gate CMOS process with minimal process redesign. The standard CMOS sequence is unaltered until the contact windows are opened. The complete sensor has 40-43-mV/pH pH sensitivity and demonstrates common-mode rejection to ambient light and noise from the electrolyte
  • Keywords
    CMOS integrated circuits; electric sensing devices; insulated gate field effect transistors; integrated circuit technology; operational amplifiers; pH measurement; CMOS operational amplifier; CMOS-compatible ISFET process; ISFET-operational amplifier; SiO2Ny-Si3N4-SiO 2 gate; Ta2O5-SiO2 gate; chemical sensor; common-mode rejection; difference measurement technique; differential sensing; ion-sensitive field-effect transistor; minimal process redesign; on-chip noble metal counterelectrode; pH sensitivity; pH sensor; standard CMOS sequence; temperature compensation; Chemical sensors; Contacts; Differential amplifiers; Electric potential; Electrodes; FETs; MOSFET circuits; Measurement techniques; Operational amplifiers; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.19957
  • Filename
    19957