DocumentCode :
865714
Title :
A CMOS-integrated `ISFET-operational amplifier´ chemical sensor employing differential sensing
Author :
Wong, Hon-Sum ; White, Marvin H.
Author_Institution :
Sherman Fairchild Center, Lehigh Univ., Bethlehem, PA, USA
Volume :
36
Issue :
3
fYear :
1989
fDate :
3/1/1989 12:00:00 AM
Firstpage :
479
Lastpage :
487
Abstract :
The ISFET (ion-sensitive field-effect transistor) pH sensor is first matched with a MOSFET at the differential input stage of a CMOS operational amplifier (called the ISFET-operational amplifier) to cancel out the temperature sensitivity. Then, the output of an ISFET-operational amplifier with a Ta2O5/SiO2 gate (58-59 mV/pH) ISFET is differentially amplified against the output of another on-chip ISFET-operational amplifier with a SiOx Ny/Si3N4/SiO2 gate ISFET (18-20-mV/pH). An on-chip noble metal counterelectrode serves as the electrical contact to define the electric potential of the electrolyte. No external reference electrode is required. The difference measurement technique achieves (1) common-mode rejection of the solution potential, and (2) relaxation of the requirement that the on-chip reference electrode be ideal. The CMOS-compatible ISFET process is modified from a standard self-aligned polysilicon gate CMOS process with minimal process redesign. The standard CMOS sequence is unaltered until the contact windows are opened. The complete sensor has 40-43-mV/pH pH sensitivity and demonstrates common-mode rejection to ambient light and noise from the electrolyte
Keywords :
CMOS integrated circuits; electric sensing devices; insulated gate field effect transistors; integrated circuit technology; operational amplifiers; pH measurement; CMOS operational amplifier; CMOS-compatible ISFET process; ISFET-operational amplifier; SiO2Ny-Si3N4-SiO 2 gate; Ta2O5-SiO2 gate; chemical sensor; common-mode rejection; difference measurement technique; differential sensing; ion-sensitive field-effect transistor; minimal process redesign; on-chip noble metal counterelectrode; pH sensitivity; pH sensor; standard CMOS sequence; temperature compensation; Chemical sensors; Contacts; Differential amplifiers; Electric potential; Electrodes; FETs; MOSFET circuits; Measurement techniques; Operational amplifiers; Temperature sensors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.19957
Filename :
19957
Link To Document :
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