Title :
Double-gate thin-film transistor
Author :
Abraham, D. ; Poehler, T.O.
Author_Institution :
Johns Hopkins University, Applied Physics Laboratory, Silver Spring, USA
fDate :
4/1/1965 12:00:00 AM
Abstract :
A thin-film transistor (t.f.t.) with opposing gate electrodes completely isolated from the source-drain circuit has demonstrated greater conductivity modulation with the signal applied between the two gates than the same t.f.t. connected with the signal applied between a gate and the source in the conventional manner. This result precludes the assumption that charge injected into the semiconductor region accounts for the modulation.
Keywords :
modulation; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19650047
