DocumentCode
865774
Title
Nonlinear-capacitance devices
Author
Owens, A.R. ; White, Gannon
Author_Institution
University College of North Wales, School of Engineering Science, Bangor, UK
Volume
1
Issue
2
fYear
1965
fDate
4/1/1965 12:00:00 AM
Firstpage
49
Lastpage
50
Abstract
The capacitance characteristics of normal and `hyperabrupt¿ junction diodes are first reviewed. A discontinuity in the slope of the capacitance characteristic of the field-effect transistor is then discusscd; the variation in loss in the vicinity of the pinchoff region is found to be consistent with a qualitative theory for the effect.
Keywords
capacitance; dielectric devices; semiconductor devices; semiconductor diodes; transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19650048
Filename
4205408
Link To Document