DocumentCode :
865880
Title :
An aspect of second breakdown in transistors
Author :
Agatsuma, T. ; Kohisa, T. ; Sugiyama, Akihiko
Volume :
52
Issue :
11
fYear :
1964
Firstpage :
1372
Lastpage :
1373
Keywords :
Breakdown voltage; Conductivity; Delay effects; Electric breakdown; Equations; Germanium alloys; P-n junctions; Sufficient conditions; Temperature sensors;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1964.3396
Filename :
1445326
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=865880
