Analysis of conduction in fully depleted SOI MOSFETs

Author

Young, K. Konrad

Author_Institution

MIT Lincoln Lab., Lexington, MA, USA

Volume

36

Issue

3

fYear

1989

fDate

3/1/1989 12:00:00 AM

Firstpage

504

Lastpage

506

Abstract

The conduction characteristics of fully depleted SOI MOSFETs studied by theoretical analysis and computer simulation are discussed. In these devices the ideal inverse subthreshold slope of 59.6 mV/decade is obtained if the interface-state capacitances are much smaller than the gate-oxide and silicon-film capacitances. For above-threshold conduction, with decreasing silicon film thickness the inversion charges penetrate more deeply into the film and the transconductance increases because of the decreasing fraction of surface conduction

Keywords

insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; Si-SiO₂; above-threshold conduction; computer simulation; conduction characteristics; fully depleted SOI MOSFETs; gate oxide capacitance; interface-state capacitances; inverse subthreshold slope; silicon-film capacitances; surface conduction; theoretical analysis; transconductance increases; Capacitance; Circuit simulation; Conductive films; Dielectric constant; MOSFETs; Semiconductor films; Silicon; Substrates; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.19960

Filename

19960