Title :
Analysis of conduction in fully depleted SOI MOSFETs
Author :
Young, K. Konrad
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
fDate :
3/1/1989 12:00:00 AM
Abstract :
The conduction characteristics of fully depleted SOI MOSFETs studied by theoretical analysis and computer simulation are discussed. In these devices the ideal inverse subthreshold slope of 59.6 mV/decade is obtained if the interface-state capacitances are much smaller than the gate-oxide and silicon-film capacitances. For above-threshold conduction, with decreasing silicon film thickness the inversion charges penetrate more deeply into the film and the transconductance increases because of the decreasing fraction of surface conduction
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; Si-SiO2; above-threshold conduction; computer simulation; conduction characteristics; fully depleted SOI MOSFETs; gate oxide capacitance; interface-state capacitances; inverse subthreshold slope; silicon-film capacitances; surface conduction; theoretical analysis; transconductance increases; Capacitance; Circuit simulation; Conductive films; Dielectric constant; MOSFETs; Semiconductor films; Silicon; Substrates; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
