Title :
SnO2 RGTO UV activation for CO monitoring
Author :
Comini, Elisabetta ; Ottini, Luca ; Faglia, Guido ; Sberveglieri, Giorgio
Author_Institution :
Gas Sensor Lab., INFM, Brescia, Italy
Abstract :
In this paper, we present recent results regarding the activation of sensors with high density power light of energy in the range of the energy gap of the semiconductor. We report the measurements registered for tin-oxide rheotaxial growth and thermal oxidation deposited layers using CO as a target gas. The influence of doping on the activated gas-sensing properties has been investigated. We have found the value of the incident power corresponding to the best gas-sensing performances (response enhancement and kinetics). The comparison between dark and irradiation condition is presented for the different kind of layers tested.
Keywords :
IV-VI semiconductors; chemical vapour deposition; energy gap; epitaxial growth; gas sensors; tin compounds; CO; CO monitoring; RGTO UV activation; SnO2; carbon monoxide; doping; energy gap; gas sensors; gas-sensing properties; high density energy power light; semiconductor; thermal oxidation; tin-oxide rheotaxial growth; tin-oxide sensor; Gas detectors; Kinetic theory; Lattices; Lighting; Monitoring; Photoconducting materials; Pollution; Semiconductor materials; Silicon; Temperature sensors;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2003.822216
