Title :
Correlation of Gm degradation of submicrometer MOSFETs with refractive index and mechanical stress of encapsulation materials
Author :
Stinebaugh, William H., Jr. ; Harrus, Alain ; Knolle, Willam R.
Author_Institution :
AT&T Bell Lab., Allentown, PA, USA
fDate :
3/1/1989 12:00:00 AM
Abstract :
Evaluations of five different plasma-deposited silicon nitride films for use as an encapsulation material for polysilicon-gate MOSFETs are discussed. The films were (1) a-SiN:H; (2) Applied Materials a-SiN:H process B; (3) Applied Materials a-SiN:H process D; (4) silicon oxynitride, a-SiON:H; and (5) fluorinated silicon nitride, a-SiNF:H. Submicrometer MOSFET devices that aged the least as measured by transconductance degradation were encapsulated with films having the lowest refractive index (a-SiON:H and a-SiNF:H). The results show that films with low refractive index and low absolute value of mechanical stress age the least. The results are interpreted in terms of the Meyer-Fair model where the lower refractive index films are more porous to H leaving the device than the higher refractive index films
Keywords :
ageing; encapsulation; insulated gate field effect transistors; refractive index; reliability; semiconductor device models; semiconductor technology; silicon compounds; stress effects; Gm degradation; H outdiffusion; Meyer-Fair model; ageing; amorphous SiN:H film; amorphous SiNF:H film; amorphous SiON:H film; correlation; encapsulation materials; mechanical stress; polycrystalline Si; porosity; refractive index; reliability; submicrometer MOSFETs; transconductance degradation; Aging; Encapsulation; MOSFETs; Optical films; Plasma devices; Plasma materials processing; Plasma measurements; Refractive index; Semiconductor films; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
