Title :
High-mobility CMOS transistors fabricated on very thin SOS films
Author :
Dumin, David J. ; Dabral, S. ; Freytag, Michael H. ; Robertson, P.J. ; Carver, Gary P. ; Novotny, Donald B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Clemson Univ., SC, USA
fDate :
3/1/1989 12:00:00 AM
Abstract :
It is reported that the mobility of CMOS transistors fabricated on very thin silicon-on-sapphire (SOS) films is a function of the film growth rate. Transistors with mobilities nearly as high as those obtained on 1.0-μm-thick films have been fabricated on SOS films 0.2 μm thick that have been grown at growth rates above 4 μm/min
Keywords :
CMOS integrated circuits; VLSI; integrated circuit technology; semiconductor technology; 0.067 micron/s; 0.2 micron; CMOS transistors; Si-Al2O3; film growth rate; high crystal growth rates; silicon-on-sapphire; thin SOS films; CMOS technology; Chemicals; Circuits; Epitaxial growth; Fabrication; Inductors; Isolation technology; Semiconductor films; Silicon on insulator technology; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
