DocumentCode :
866560
Title :
Summary of the Fourth International Conference on Ion Implantation: Equipment and Techniques
Author :
Glawischnig, H. ; Ryssel, H. ; McKenna, C.
Author_Institution :
Siemens AG, Munich, Germany
Volume :
30
Issue :
2
fYear :
1983
fDate :
4/1/1983 12:00:00 AM
Firstpage :
1693
Lastpage :
1696
Abstract :
On September 13-17, 1982, the Fourth International Conference on Ion Implantation: Equipment and Techniques, was held in Berchtesgaden, Germany. Seventy-seven invited and contributed papers in the fields of ion-implantation equipment (ion sources, high-current implanters for metals and semiconductors, beam scanners, wafer cooling, wafer transport, etc.), equipment testing (dosimetry, voltage calibration, etc.), special measuring techniques for implanted layers, as well as applications of ion implantation to semiconductors and metals, were presented. In addition, a school on problems concerning the use of ion implantation was held. This paper summarizes the various presentations.
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1983.4332617
Filename :
4332617
Link To Document :
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