MeV Ion Implantation Systems for Production Processing of Silicon Wafers

A 3 MeV boron implantation system is presently undergoing final beam tests prior to shipment. This is a 1.2 MV tandem Pelletron based system capable of automatically processing 20 wafers per hour at a dose of 1013 ions/cm2 for 100mm wafers using a serial, cassette to cassette, wafer handler. This system is equipped with a reliable negative ion cesium sputter source and electrostatic beam scanning after 90° magnetic energy analysis. With the exception of the wafer handler and some vacuum valves, the entire vacuum system including the ion beam accelerating tube is all metal and ceramic. The vacuum system is automated. A microprocessor provides for data logging into a customer supplied computer. A single ended 3 MV Pelletron based implanter has also been designed for high dose, rapid throughput implantation of 3 MeV singly charged ions. Both systems accommodate 100 mm and 125 mm diameter wafers. Both systems are designed for high reliability, minimum down time and simple maintenance.