Title :
Infrared phase modulators with multiple quantum wells
Author :
Holm, David A. ; Taylor, Henry F.
Author_Institution :
Boeing Aerosp. & Electron., Seattle, WA, USA
fDate :
11/1/1989 12:00:00 AM
Abstract :
The intraband transition of a graded Ga1-xAlxAs/AlAs quantum well is analyzed for its suitability as a phase modulator at infrared wavelengths. Using the effective mass model and numerically solving Schrodinger´s equation for a graded energy well with an external electric field, it is found that significant phase changes are possible for comparatively small voltages even for operation far from the absorption resonance. In an example, the calculated value for Vπ at 10.6 μm is 150 V, an improvement by over two orders of magnitude over conventional bulk electrooptic material for that wavelength regime
Keywords :
III-V semiconductors; Schrodinger equation; aluminium compounds; electro-optical devices; gallium arsenide; numerical analysis; optical modulation; semiconductor quantum wells; 10.6 micron; 150 V; Ga1-xAlxAs-AlAs; III-V semiconductor; Schrodinger´s equation; absorption resonance; bulk electrooptic material; effective mass model; external electric field; graded energy well; infrared wavelengths; intraband transition; multiple quantum wells; numerical solution; phase modulators; Artificial intelligence; Effective mass; Electrons; Frequency; Numerical models; Optical materials; Phase modulation; Resonance; Schrodinger equation; Voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
