DocumentCode
866604
Title
High Power Photodiode Wafer Bonded to Si Using Au With Improved Responsivity and Output Power
Author
Li, Ning ; Chen, Hao ; Duan, Ning ; Liu, Mingguo ; Demiguel, Stephane ; Sidhu, Rubin ; Holmes, Archie L., Jr. ; Campbell, Joe C.
Author_Institution
Microelectron. Res. Center, Texas Univ., Austin, TX
Volume
18
Issue
23
fYear
2006
Firstpage
2526
Lastpage
2528
Abstract
High power photodiodes wafer bonded to Si using a gold intermediate layer were demonstrated. A fabricated 20-mum-diameter photodiode exhibited a bandwidth of ~18 GHz, a large-signal saturation-current of ~50 mA, and a peak responsivity of ~1 A/W. Both the responsivity and the saturation current of the Au-bonded photodiode were improved compared to the photodiode with the same structure on InP substrate
Keywords
elemental semiconductors; gold; optical fabrication; photodiodes; silicon; wafer bonding; 20 mum; Au; Si; gold intermediate layer; peak responsivity; photodiode; saturation current; wafer bonding; Conducting materials; Gold; Indium gallium arsenide; Indium phosphide; Photodetectors; Photodiodes; Power generation; Thermal conductivity; Voltage; Wafer bonding; Microwave photonics; photodetector; photodiode; unitraveling-carrier photodiode;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2006.887209
Filename
4032853
Link To Document