DocumentCode

866613

Title

Ion Implantation into GaAs for Microwave Device Applications

Author

Paulson, W.M.

Author_Institution

Semiconductor Research and Development Laboratory Motorola Semiconductor Product Sector Phoenix, Arizona 85008

Volume

30

Issue

2

fYear

1983

fDate

4/1/1983 12:00:00 AM

Firstpage

1713

Lastpage

1717

Keywords

Annealing; Conductivity; Gallium arsenide; Implants; Impurities; Ion implantation; Microwave devices; Oxygen; Semiconductor materials; Substrates;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.1983.4332622

Filename

4332622