Title :
Nitride-Based Light Emitting Diodes With Textured Sidewalls and Pillar Waveguides
Author :
Shen, C.F. ; Chang, S.J. ; Ko, T.K. ; Kuo, C.T. ; Shei, S.C. ; Chen, W.S. ; Lee, C.T. ; Chang, C.S. ; Chiou, Y.Z.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
Abstract :
Nitride-based light emitting diodes (LEDs) with sidewall texture and pillar waveguides (STPW) were fabricated using conventional lithography method. With 20-mA injection current, it was found that forward voltages were 3.16 and 3.15 V for the conventional LED and the LED with STPW, respectively. It was also found that 20-mA LED output powers were 8.4 and 10.1 mW for conventional LED and the LED with STPW, respectively. The enhancement is attributed to the out-coupling of lateral waveguide mode in the near horizontal directions
Keywords :
light emitting diodes; optical fabrication; optical waveguides; photolithography; 10.1 mW; 20 mA; 3.15 V; 3.16 V; 8.4 mW; LED; lithography; nitride-based light emitting diodes; pillar waveguides; sidewall texture; waveguide out-coupling; Etching; Fabrication; Gallium nitride; Light emitting diodes; Microelectronics; Power generation; Rough surfaces; Semiconductor films; Semiconductor waveguides; Surface roughness; Nitride-based LEDs; textured sidewall; waveguide;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.887350
