Title :
Effects of Low Temperature Annealing of B+ + Si+ OR BF2+ + Si+ Implanted Silicon
Author :
Wilson, S.R. ; Gregory, R.B. ; Paulson, W.M. ; Hamdi, A.H. ; McDaniel, F.D.
Author_Institution :
Semiconductor Research and Development Laboratories Motorola Semiconductor Products Sector 5005 E. McDowell Road, Phoenix, AZ 85008
fDate :
4/1/1983 12:00:00 AM
Keywords :
Amorphous materials; Annealing; Boron; Epitaxial growth; Implants; Impurities; Lattices; Silicon; Solids; Temperature distribution;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1983.4332626
