Title :
As Migration during PtSi Formation
Author :
Hamdi, A.H. ; McDaniel, F.D. ; Wilson, S.R.
Author_Institution :
Department of Physics North Texas State University Denton, TX 76203
fDate :
4/1/1983 12:00:00 AM
Abstract :
The migration of implanted As durinq PtSi formation on (100) Si wafers has been studied by Rutherford backscattering techniques. Two thicknesses of PtSi layer (50 and 200 nm) have been choosen for this study. The PtSi formation temperatures were either 525°C or 625°C. The data show that the number of the migrating As atoms is independent of the PtSi thickness or formation temperatures used in this investigation.
Keywords :
Annealing; Atmosphere; Atomic layer deposition; Backscatter; Etching; Magnetic analysis; Physics; Silicides; Silicon; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1983.4332628
