Characteristics of Bloch line memory read operation in 2 μm bubble material

The read operation performance in Block line memory has been studied using a typical 2-μm bubble material. A reasonable operation margin for chopping detection of a vertical Block line was obtained with a hair-pin-type chopping conductor with a 4-μm pattern width and 1.5-μm pattern gap. The chopping current margin and the bias-field margin are 146 mA±4.1%, and 107 Oe±6.1%, respectively. Domain-wall configurations during the chopping process have been studied numerically and compared with experimental results. Simulation results suggest that operation performance degradation can be ascribed to horizontal Bloch line nucleation during the chopping process