10-35 nanosecond magnetoresistive memories

Author

Ranmuthu, K.T.M. ; Ranmuthu, I.W. ; Pohm, A.V. ; Comstock, C.S. ; Hassoun, M.

Author_Institution

Dept. of Electr. Eng. & Comput. Eng., Iowa State Univ., Ames, IA, USA

Volume

26

Issue

5

fYear

1990

fDate

9/1/1990 12:00:00 AM

Firstpage

2532

Lastpage

2534

Abstract

Experimental results demonstrate that high read output levels in the range of ±10 mV can be achieved by increasing the MR (magnetoresistive) memory element size and using a suitable sense technique with a bridge circuit including a reference line. Large MR memory cells with a sense resistance of about 470 Ω have been synthesized by stringing eight 1.8×1.2-μm MR elements together. These were tested in a bridge formation to obtain signal levels as large as -11 mV and +7 mV, with an approximate settling time of 35 ns in a discrete circuit. The results obtained suggest the possibility of fabricating much faster MR memories in the integrated form, and calculations have indicated that access times as low as 10 ns can be achieved

Keywords

magnetic storage; magnetoresistance; 10 to 35 ns; access times; bridge circuit; discrete circuit; integrated form; magnetoresistive memories; memory element size; read output levels; reference line; sense resistance; sense technique; settling time; Bridge circuits; Circuit noise; Circuit synthesis; Circuit testing; Magnetoresistance; Maintenance engineering; Nonvolatile memory; Read-write memory; Signal synthesis; Voltage;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.104787

Filename

104787