DocumentCode
866964
Title
Friction modeling in linear chemical-mechanical planarization
Author
Yi, Jingang
Author_Institution
Dept. of Mech. & Aerosp. Eng., Rutgers Univ., Piscataway, NJ
Volume
28
Issue
5
fYear
2008
fDate
10/1/2008 12:00:00 AM
Firstpage
59
Lastpage
78
Abstract
In this article, we develop an analytical model of the relationship between the wafer/pad friction and process configuration. We also provide experimental validation of this model for in situ process monitoring. CMP thus demonstrates that the knowledge and methodologies developed for friction modeling and control can be used to advance the understanding, monitoring, and control of semiconductor manufacturing processes. Meanwhile, relevant issues and challenges in real-time monitoring of CMP are presented as sources of future development.
Keywords
chemical mechanical polishing; friction; integrated circuit manufacture; planarisation; polishing; CMP; analytical model; control; friction modeling; linear chemical-mechanical planarization; semiconductor manufacturing; wafer-pad friction; Chemical processes; Friction; Integrated circuit modeling; Lithography; Mathematical model; Planarization; Semiconductor device manufacture; Semiconductor device modeling; Slurries; Surface topography;
fLanguage
English
Journal_Title
Control Systems, IEEE
Publisher
ieee
ISSN
1066-033X
Type
jour
DOI
10.1109/MCS.2008.927333
Filename
4627393
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