• DocumentCode
    866964
  • Title

    Friction modeling in linear chemical-mechanical planarization

  • Author

    Yi, Jingang

  • Author_Institution
    Dept. of Mech. & Aerosp. Eng., Rutgers Univ., Piscataway, NJ
  • Volume
    28
  • Issue
    5
  • fYear
    2008
  • fDate
    10/1/2008 12:00:00 AM
  • Firstpage
    59
  • Lastpage
    78
  • Abstract
    In this article, we develop an analytical model of the relationship between the wafer/pad friction and process configuration. We also provide experimental validation of this model for in situ process monitoring. CMP thus demonstrates that the knowledge and methodologies developed for friction modeling and control can be used to advance the understanding, monitoring, and control of semiconductor manufacturing processes. Meanwhile, relevant issues and challenges in real-time monitoring of CMP are presented as sources of future development.
  • Keywords
    chemical mechanical polishing; friction; integrated circuit manufacture; planarisation; polishing; CMP; analytical model; control; friction modeling; linear chemical-mechanical planarization; semiconductor manufacturing; wafer-pad friction; Chemical processes; Friction; Integrated circuit modeling; Lithography; Mathematical model; Planarization; Semiconductor device manufacture; Semiconductor device modeling; Slurries; Surface topography;
  • fLanguage
    English
  • Journal_Title
    Control Systems, IEEE
  • Publisher
    ieee
  • ISSN
    1066-033X
  • Type

    jour

  • DOI
    10.1109/MCS.2008.927333
  • Filename
    4627393