DocumentCode

866975

Title

The metal–gate transistor

Author

Lindmayer, J.

Volume

52

Issue

12

fYear

1964

Firstpage

1751

Lastpage

1751

Keywords

Bridge circuits; Conductors; Crystallization; Electron emission; Epitaxial growth; Laboratories; Semiconductivity; Semiconductor device doping; Voltage;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/PROC.1964.3497

Filename

1445427