• DocumentCode
    867005
  • Title

    Thermal drift of m.o.s. devices

  • Author

    Giralt, G. ; Andre, B. ; Simonne, J. ; Esteve, Daniel

  • Author_Institution
    Université de Toulouse, Faculté des Sciences, Laboratoire de Génie Electrique, Toulouse, France
  • Volume
    1
  • Issue
    7
  • fYear
    1965
  • fDate
    9/1/1965 12:00:00 AM
  • Firstpage
    185
  • Lastpage
    186
  • Abstract
    Experimental results concerning the temperature dependence of an m.o.s. field-effect transistor are presented. These results show a striking linear dependence of the temperature coefficient on the gate voltage. Comparison between experiment and simplified theory gives rise to many problems of validity of the theory.
  • Keywords
    transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19650171
  • Filename
    4205706
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=867005